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Yoshinobu Aoyagi

Ritsumeikan University, Japan


Yoshinobu Aoyagi has his expertise in nano technology and creation of advanced materials for developing new devices. His recent work is a discovery of anti-surfactant phenomena to create spontaneously GaN quantum dots even on the lattice matched substrate, for example GaN quantum dots on a GaN substrate which is impossible under common crystal growth condition. He has also succeeded in developing a new technology to fabricate a 3D photonic crystal, DUV LED, a large scale DUV light emitter of more than 2 inches size. Laser processing is also another main work. He also succeeded in pioneer works on laser induced atomic layer deposition and atomic layer etching at the beginning stage of the research. He published more than 500 articles in scientific journals and presented a lot of invited talks.


Abstract : A new laser induced local material engineering to convert from n-type to p-type nitride semiconductor to fabricate high power vertical AlGaN/GaN devices on Si substrate