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Noriko Kurose

Ritsumeikan University, Japan


Noriko Kurose has her expertise in “Crystal growth engineering of nitride semiconductor using metal organic chemical vapor deposition to control the material properties”. She found an insulating material can be converted to conductive one by introducing nano via-holes spontaneously inside the insulator using a crystal growth technique and she has clarified the conversion mechanism. Her invention opens a way to fabricate various vertical devices on Si substrate and Si on chip devices. Actually, she has succeeded in fabricating a vertical UV-LED and a vertical UV sensor using her technology. In addition, she has succeeded in fabricating large area panel type micro plasma excited DUV light emitting devices with a size of more than two inches. She was invited to present her work in many international conferences.


Abstract : Realization of conductive aluminum nitride epitaxial layer on silicon substrate by forming spontaneous nano size via-holes