University of Batna, Algeria
Title: Boosting Electrical Performance of InGaN solar cells
Biography: Beddiaf Zaidi
Recent studies have shown that group III nitrides semiconductor has significant potential in the photovoltaic applications [1, 2] and among these, InGaN alloy is a promising candidate for thin flim solar cell.
The aim of this work is to simulate the maximum conversion efficiency of InGaN based thin film solar cell structure with the best junction configurations and parameters by SCAPS-1D software [3-5]. The effects of doping concentration and thickness of each layer on the electrical parameters, such as the short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), and conversion efficiency (ƞ).