Bin Zhu
Hubei University, China
Title: Semiconductors and semiconductor ionic hetero-structure composites for next generation energy conversion technology
Biography
Biography: Bin Zhu
Abstract
Studies on ionic nobility in semiconductor lead to new generation electron and semiconductor devices, e.g., Displays, valve switches, new memory devices, superconducting devices, super magnetic devices, electro chemical transistors, low-power electronics and novel sensing energy devices etc., but ionic properties and transports missing that has the same or more important significance than ionic effects on electrons, because the electronic effect on ions and movement to be widely applied for new generation energy technologies. Over hundred years, people have designed and looked for ionic conductors and ionic conductivity only focusing on so called ionic materials or conductors, but challenge unsolved, typically, solid oxide fuel cell (SOFC), yttrium stabilized zirconia (YSZ), which needs high operational temperature in excess of 700°C to operate properly, dominated the SOFC technology over hundred years, not yet commercially. The traditional ionic electrolyte, e.g., YSZ can be now replaced by semiconductor and semiconductor ionic properties and materials we have developed to demonstrate higher device performance at temperatures well below 600°C and much simpler technology, e.g., single component fuel cell to replace traditional anode, electrolyte and catholic three components fuel cell technology. Turning to semiconductors, to develop semiconductor ionic property and conductivity, we can reach ever higher ion conductivity which has demonstrated better fuel cell performance and simpler technology. Semiconductor and semiconductor-ionic hetero structure composites are leading to next generation energy devices.